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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.3
- 발행연도
- 2014.6
- 수록면
- 263 - 267 (5page)
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초록· 키워드
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Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance [1]. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don’t have a great effect on temperature change.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. COMPARISON OF TEMPERATURE RISE
Ⅲ. TEMPERATURE CHANGE DEPENDING ON DEGREE OF TRENCH ETCHING
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (10)
참고문헌 신청
1. [단행본] - B. J. Baliga / 2009 / Fundamentals of Power Semiconductor Devices / Springer
2. [학술지(정기간행물)] - 이현웅 / 2012 / Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구 / 전기전자재료학회논문지 25 (5) : 340 ~ 344
3. [학술지(정기간행물)] - S. Kyoung / / A Novel Trench IGBT with a Deep P+ layer beneath the Trench Emitter / IEEE Electron Device 30 (1) : 82 ~ 84
4. [학술지(정기간행물)] - Jong Min Geum / 2012 / A study on the Electrical Characteristic of 600V super junction MOSFET / The Korean Institute of Electrical and Electronic Material Engineers(KIEEME) 25 (5) : 288 ~
5. [학술지(정기간행물)] - Yu Seup Cho / 2012 / Electrical Characteristic Improvement of power MOSFET with Single Floating Island Structure / The Korean Institute of Electrical and Electronic Material Engineers(KIEEME) 25 (1) : 284 ~
2. [학술지(정기간행물)] - 이현웅 / 2012 / Protection Circuit Module에 최적화된 60 V급 TDMOSFET 최적화 설계에 관한 연구 / 전기전자재료학회논문지 25 (5) : 340 ~ 344
3. [학술지(정기간행물)] - S. Kyoung / / A Novel Trench IGBT with a Deep P+ layer beneath the Trench Emitter / IEEE Electron Device 30 (1) : 82 ~ 84
4. [학술지(정기간행물)] - Jong Min Geum / 2012 / A study on the Electrical Characteristic of 600V super junction MOSFET / The Korean Institute of Electrical and Electronic Material Engineers(KIEEME) 25 (5) : 288 ~
5. [학술지(정기간행물)] - Yu Seup Cho / 2012 / Electrical Characteristic Improvement of power MOSFET with Single Floating Island Structure / The Korean Institute of Electrical and Electronic Material Engineers(KIEEME) 25 (1) : 284 ~
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